Physical vapor deposition is one of the coating method for fabricating thin film under high vacuum environment. Our core technology for sintering ceramics enable to reduce out-gassing and spitting arise from evaporation material during this deposition. Our materials are used for a wide variety of applications such as, camera components, smart phone components, optical application including sunglasses, automotive mirrors and screens, to name a few. We can supply a wide range of Oxides and Fluorides as well as base elements and Sulfides, Nitrides for coating applications.
Shapes
Pellet
Granule
Granule(outgassing)
Pellet(long)
Cresent
Size
Pellet=Φ18xT10mm, Φ20xT10mm, Φ25xT10mm, Φ40xT20mm, etc.
Granule=1-3mm, 2-5mm, etc.
Custom-made
Evaporation Source
E-Beam(EB), Resistance Heating(RH), etc.
Product Lineup
Metal oxides
- Al2O3 - Aluminum oxide
- CeO2 - Cerium (IV) oxide
- Cr2O3 - Chromium oxide
- Fe2O3 - Iron (Ⅲ) oxide
- Ga2O3 - Gallium oxide
- HfO2 - Hafnium oxide
- I.T.O - Indium oxide + Tin oxide
- MgO - Magnesium oxide
- Nb2O5 - Niobium (V) oxide
- NiO - Nickel (Ⅱ) oxide
- SiO - Silicon monoxide
- SiO2 - Silicon dioxide
- SnO2 - Tin oxide
- Ta2O5 - Tantalum (V) oxide
- Ti3O5 - Titanium pentoxide
- TiO - Titanium (II) oxide
- TiO2 - Titanium (IV) oxide
- WO3 - Tungsten oxide
- Y2O3 - Yttrium oxide
- Yb2O3 - Ytterbium oxide
- ZnO - Zinc oxide
- ZrO2 - Zirconium oxide
- ZRT2 - Zirconium oxide + Titanium (IV) oxide
Metal fluorides
- AlF3 - Aluminum fluoride
- BaF2 - Barium (II) fluoride
- BaF2+YF3 - Barium (II) fluoride + Yttrium fluoride
- CaF2 - Calcium fluoride
- CeF3 - Cerium (Ⅲ) fluoride
- GdF3 - Gadolinium fluoride
- LaF3 - Lanthanum fluoride
- LiF - Lithium fluoride
- MgF2 - Magnesium fluoride
- NaF - Sodium fluoride
- NdF3 - Neodymium fluoride
- SmF3 - Samarium fluoride
- YbF3 - Ytterbium fluoride
- YF3 - Yttrium fluoride
Metal fluorides
Metal fluorides
Metal oxides
Al2O3 - Aluminum oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.63（＠550nm） | Theoretical density | 4.0g/cm3 |
| Transmittance range | 0.2 ～ 8μm | Melting point | 2046℃ |
| Evaporation Source | EB | Boiling point | 2980℃ |
CeO2 - Cerium (IV) oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.2（＠550nm） | Theoretical density | 7.3g/cm3 |
| Transmittance range | 0.4 ～ 16μｍ | Melting point | 1950℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | - |
Cr2O3 - Chromium oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.24-i0.07（＠700nm） | Theoretical density | 5.21g/cm3 |
| Transmittance range | 1.2 ～ 10μｍ | Melting point | 2435℃ |
| Evaporation Source | EB | Boiling point | 4000℃ |
Fe2O3 - Iron (Ⅲ) oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 3.0（＠550nm） | Theoretical density | 5.24g/cm3 |
| Transmittance range | 0.8㎛~ | Melting point | 1565℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | - |
Ga2O3 - Gallium oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.45（＠550nm） | Theoretical density | 5.95g/cm3 |
| Transmittance range | - | Melting point | 1900℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | - |
HfO2 - Hafnium oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.95（＠550nm） | Theoretical density | 9.68g/cm3 |
| Transmittance range | 0.23 ～ 12μｍ | Melting point | 2758℃ ± 25℃ |
| Evaporation Source | EB | Boiling point | 5400℃ |
I.T.O - Indium oxide + Tin oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.06-i0.016(＠500nm) | Theoretical density | - |
| Transmittance range | 0.4 ～ 1μｍ | Melting point | - |
| Evaporation Source | EB | Boiling point | - |
MgO - Magnesium oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.74（＠550nm） | Theoretical density | 3.58g/cm3 |
| Transmittance range | 0.23 ～ 9μｍ | Melting point | 2800℃ |
| Evaporation Source | EB | Boiling point | 3600℃ |
Nb2O5 - Niobium (V) oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.33(＠500nm) | Theoretical density | 4.47g/cm3 |
| Transmittance range | 0.32 ～ 8μｍ | Melting point | 1485℃ |
| Evaporation Source | EB | Boiling point | - |
NiO - Nickel (Ⅱ) oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | - | Theoretical density | 6.82g/cm3 |
| Transmittance range | - | Melting point | 1955℃ |
| Evaporation Source | EB | Boiling point | - |
SiO - Silicon monoxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.9（＠550nm） | Theoretical density | 2.24g/cm3 |
| Transmittance range | 0.55~8㎛ | Melting point | 1700℃以下 |
| Evaporation Source | EB Resistance Heating |
Boiling point | - |
SiO2 - Silicon dioxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.46(＠500nm) | Theoretical density | 2.20g/cm3 |
| Transmittance range | 0.16～8μｍ | Melting point | 1500℃ |
| Evaporation Source | EB | Boiling point | 2230℃ |
SnO2 - Tin oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.0（＠550nm） | Theoretical density | 6.95g/cm3 |
| Transmittance range | 0.4~1.5㎛ | Melting point | 1565℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | - |
Ta2O5 - Tantalum (V) oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.16（＠550nm） | Theoretical density | 8.73g/cm3 |
| Transmittance range | 0.35 ～ 10μｍ | Melting point | 1872℃ |
| Evaporation Source | EB | Boiling point | - |
Ti3O5 - Titanium pentoxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.3 ～ 2.55（＠550nm） | Theoretical density | - |
| Transmittance range | 0.35 ～ 12μｍ | Melting point | - |
| Evaporation Source | EB | Boiling point | - |
TiO - Titanium (II) oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.3 ～ 2.55（＠550nm） | Theoretical density | 4.93g/cm3 |
| Transmittance range | 0.35 ～ 12μｍ | Melting point | 1750℃ |
| Evaporation Source | EB | Boiling point | 3000℃ |
TiO2 - Titanium (IV) oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.3 ～ 2.55（＠550nm） | Theoretical density | 4.26g/cm3 |
| Transmittance range | 0.35 ～ 12μｍ | Melting point | 1850℃ |
| Evaporation Source | EB | Boiling point | 3000℃ |
WO3 - Tungsten oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.2（＠550nm） | Theoretical density | 7.15g/cm3 |
| Transmittance range | 0.4μｍ ～ | Melting point | 1473℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | - |
Y2O3 - Yttrium oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.87（＠550nm） | Theoretical density | 5.03g/cm3 |
| Transmittance range | 0.25 ～ 2μｍ | Melting point | 2410℃ |
| Evaporation Source | EB | Boiling point | 4300℃ |
Yb2O3 - Ytterbium oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.75（＠550nm） | Theoretical density | 9.2g/cm3 |
| Transmittance range | 0.28㎛~ | Melting point | 1127℃ |
| Evaporation Source | EB | Boiling point | 1850℃ |
ZnO - Zinc oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.1（＠550nm） | Theoretical density | 5.47g/cm3 |
| Transmittance range | 0.35 ～ 20μｍ | Melting point | 1975℃ |
| Evaporation Source | EB | Boiling point | - |
ZrO2 - Zirconium oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.05（＠550nm） | Theoretical density | 5.56g/cm3 |
| Transmittance range | 0.3 ～ 8μｍ | Melting point | 2677℃ |
| Evaporation Source | EB | Boiling point | 4548℃ |
ZRT2 - Zirconium oxide + Titanium (IV) oxide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.10（＠550nm） | Theoretical density | - |
| Transmittance range | 0.3 ～ 7μｍ | Melting point | - |
| Evaporation Source | EB | Boiling point | - |
Metal fluorides
AlF3 - Aluminum fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.38（＠550nm） | Theoretical density | 2.88g/cm3 |
| Transmittance range | 0.22 ～ 12μｍ | Melting point | 1040℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 1260℃（Sublimation） |
BaF2 - Barium (II) fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.48（＠550nm） | Theoretical density | 4.87g/cm3（20℃） |
| Transmittance range | 0.25~15㎛ | Melting point | 1287℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 1287℃ |
BaF2+YF3 - Barium (II) fluoride + Yttrium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | - | Theoretical density | - |
| Transmittance range | - | Melting point | - |
| Evaporation Source | EB Resistance Heating |
Boiling point | - |
CaF2 - Calcium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.23～1.45（＠550nm） | Theoretical density | 3.18g/cm3 |
| Transmittance range | 0.15 ～ 12μｍ | Melting point | 1418℃ |
| Evaporation Source | Resistance Heating | Boiling point | 2500℃ |
CeF3 - Cerium (Ⅲ) fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.63（＠550nm） | Theoretical density | 5.8g/cm3 |
| Transmittance range | 0.3 ～ 12μｍ | Melting point | 1324℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 1360℃ |
GdF3 - Gadolinium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.59（＠550nm） | Theoretical density | - |
| Transmittance range | 0.28μｍ ～ | Melting point | 1231℃ |
| Evaporation Source | Resistance Heating | Boiling point | 2277℃ |
LaF3 - Lanthanum fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.59（＠550nm） | Theoretical density | 5.9g/cm3 |
| Transmittance range | 0.22 ～ 14μｍ | Melting point | 1490℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 2300℃ |
LiF - Lithium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.3（＠550nm） | Theoretical density | 2.64g/cm3 |
| Transmittance range | 0.11 ～ 8μｍ | Melting point | 842℃ |
| Evaporation Source | Resistance Heating | Boiling point | 1680℃ |
MgF2 - Magnesium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.38 ～ 1.4（＠550nm） | Theoretical density | 3.2g/cm3 |
| Transmittance range | 0.13 ～ 10μｍ | Melting point | 1248℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 2260℃ |
NaF - Sodium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.34（＠550nm） | Theoretical density | 2.78g/cm3 |
| Transmittance range | 0.13～15μｍ | Melting point | 988℃ |
| Evaporation Source | Resistance Heating | Boiling point | 1704℃ |
NdF3 - Neodymium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.61（＠550nm） | Theoretical density | 6.5g/cm3 |
| Transmittance range | 0.17 ～ 12μｍ | Melting point | 1374℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 2327℃ |
SmF3 - Samarium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | - | Theoretical density | 6.5g/cm3 |
| Transmittance range | - | Melting point | 1306℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 2427℃ |
YbF3 - Ytterbium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.5（＠550nm） | Theoretical density | 8.2g/cm3 |
| Transmittance range | 0.22～12μｍ | Melting point | 1157℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 2230℃ |
YF3 - Yttrium fluoride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.5（＠550nm） | Theoretical density | 5.07g/cm3 |
| Transmittance range | 0.2～14μｍ | Melting point | 1152℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | 2230℃ |
Metal sulfides
ZnS - Zinc sulfide
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 2.35（＠550nm） | Theoretical density | 4.06g/cm3 |
| Transmittance range | 0.38~1.4㎛ | Melting point | 1850℃ |
| Evaporation Source | EB Resistance Heating |
Boiling point | - |
Metal nitrides
AlN - Aluminum nitride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.9-2.2（＠630nm） | Theoretical density | 3.25g/cm3 |
| Transmittance range | 0.3㎛~IR | Melting point | 3000℃ |
| Evaporation Source | EB | Boiling point | - |
Si3N4 - Silicon nitride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.72（＠1,500nm） | Theoretical density | 3.18g/cm3 |
| Transmittance range | 0.25~9㎛ | Melting point | - |
| Evaporation Source | EB | Boiling point | - |
TiN - Titanium nitride
| Thin film properties | Physical and Chemical Properties | ||
|---|---|---|---|
| Refractive index | 1.39-i2.84（＠650nm） | Theoretical density | 5.44g/cm3 |
| Transmittance range | - | Melting point | 2980℃ |
| Evaporation Source | EB | Boiling point | - |
Source of reference：Lee,Cheng-Chung. 光学薄膜と成膜技術. AGNE Gijutsu Center Inc. ULVAC, Inc.trans. 2005